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DG534AAP/883 Datasheet(PDF) 4 Page - Vishay Siliconix |
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DG534AAP/883 Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 16 page ![]() DG534A/538A Vishay Siliconix www.vishay.com 4 Document Number: 70069 S-05734—Rev. G, 29-Jan-02 ABSOLUTE MAXIMUM RATINGS V+ to GND –0.3 V to +21 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V+ to V––0.3 V to +21 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V– to GND –10 V to +0.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VL 0 V to (V+) + 0.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Digital Inputs (V–) –0.3 V to (VL) + 0.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . or 20 mA, whichever occurs first VS, VD (V–) –0.3 V to (V–) + 14 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . or 20 mA, whichever occurs first Current (any terminal) Continuous 20 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Current(S or D) Pulsed l ms 10% Duty 40 mA . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature (A Suffix) –65 to 150 _C . . . . . . . . . . . . . . . . . . . (D Suffix) –65 to 125 _C . . . . . . . . . . . . . . . . . . . Power Dissipation (Package)a Plastic DIPb 625 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PLCCc 450 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Sidebrazed 1200 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes: a. All leads soldered or welded to PC board. b. Derate 8.3 mW/ _C above 75_C. c. Derate 6 mW/ _C above 75_C. d. Derate 16 mW/ _C above 75_C. SPECIFICATIONSa Test Conditions Unless Otherwise Specified A Suffix –55 to 125 _C D Suffix –40 to 85 _C Parameter Symbol V+ = 15 V, V– = –3 V, VL = 5 V WR = 0.8 V, RS, EN= 2 V Tempb Typc Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangeg VANALOG V– = –5 V Full –5 8 –5 8 V Drain-Source On-Resistance rDS(on) IS = –10 mA, VS = 0 V Room Full 45 90 120 90 120 W Resistance Match Between Channels DrDS(on) VAIL = 0.8 V, VAIH = 2 V Sequence Each Switch On Room 9 9 W Source Off Leakage Current IS(off) VS = 8 V, VD = 0 V, EN = 0.8 V Room Full 0.05 –5 –50 5 50 –5 –50 5 50 Drain Off Leakage Current ID(off) VS = 0 V, VD = 8 V, EN = 0.8 V Room Full 0.1 –20 –500 20 500 –20 –100 20 100 nA Drain On Leakage Current ID(on) VS = VD = 8 V Room Full 0.1 –20 –1000 20 1000 –20 –200 20 200 Digital Control Input Voltage High VAIH Full 2 2 Input Voltage Low VAIL Full 0.8 0.8 V Address Input Current IAI VAI = 0 V, or 2 V or 5 V Room Full –0.1 –1 –10 1 10 –1 –10 1 10 mA VAO = 2.7 V Room –21 –2.5 –2.5 Address Output Current IAO VAO = 0.4 V Room 3.5 2.5 2.5 mA Dynamic Characteristics On State Input PLCC Room 28 40 40 On State Input Capacitanceg CS(on) See Figure 11 DIP Room 31 45 45 Off State Input PLCC Room 3 5 4 Off State Input Capacitanceg CS(off) DIP Room 4 5 pF Off State Output See Figure 12 PLCC Room 6 10 8 Off State Output Capacitanceg CD(off) DIP Room 8 10 Transition Time tTRANS Room Full 160 300 500 300 500 Break-Before-Make Interval tOPEN See Figure 4 Room Full 80 50 25 50 25 EN, WR Turn On Time tON See Figure 2 and 3 Room Full 150 300 500 300 500 ns EN, Turn Off Time tOFF See Figure 2 Room Full 105 175 300 175 300 Charge Injection Qi See Figure 5 Room –70 pC |
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