74LVC3G34 datasheet(6/14 Pages) PHILIPS

6 / 14 page

9397 750 14545

Product data sheet

Rev. 03 — 31 January 2005

6 of 14

Philips Semiconductors

74LVC3G34

Triple buffer gate

[1]

All typical values are measured at Tamb =25 °C.

12. Dynamic characteristics

VOH

HIGH-level output voltage VI =VIH or VIL

IO = −100 µA; VCC = 1.65 V to 5.5 V

VCC − 0.1

IO = −4 mA; VCC = 1.65 V

0.95

IO = −8 mA; VCC = 2.3 V

1.7

IO = −12 mA; VCC = 2.7 V

1.9

IO = −24 mA; VCC = 3.0 V

2.0

IO = −32 mA; VCC = 4.5 V

3.4

VOL

LOW-level output voltage

VI =VIH or VIL

IO = 100 µA; VCC = 1.65 V to 5.5 V

0.1

IO = 4 mA; VCC = 1.65 V

0.70

IO = 8 mA; VCC = 2.3 V

0.45

IO = 12 mA; VCC = 2.7 V

0.60

IO = 24 mA; VCC = 3.0 V

0.80

IO = 32 mA; VCC = 4.5 V

0.80

ILI

input leakage current

VCC = 5.5 V; VI = 5.5 V or GND

±20

µA

Ioff

power-off leakage current VCC =0V; VI or VO = 5.5 V

±20

µA

ICC

quiescent supply current

VCC = 5.5 V; VI =VCC or GND; IO =0A

µA

∆ICC

additional quiescent

supply current per pin

VCC = 2.3 V to 5.5 V; VI =VCC − 0.6 V;

IO =0A

5000

µA

Table 8:

Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Table 9:

Dynamic characteristics

GND = 0 V; test circuit see Figure 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Tamb = −40 °C to +85 °C [1]

tPHL, tPLH

propagation delay

input nA to output nY

see Figure 5

VCC = 1.65 V to 1.95 V

1.0

3.8

8.6

VCC = 2.3 V to 2.7 V

0.5

2.4

4.4

VCC = 2.7 V

0.5

2.5

5.0

VCC = 3.0 V to 3.6 V

0.5

2.2

4.1

VCC = 4.5 V to 5.5 V

0.5

1.9

3.2

CPD

power dissipation

capacitance per gate

VCC = 3.3 V

[2] [3] -14

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