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74LVC3G34 Datasheet(PDF) 7 Page - NXP Semiconductors |
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74LVC3G34 Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 14 page ![]() 9397 750 14545 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 31 January 2005 7 of 14 Philips Semiconductors 74LVC3G34 Triple buffer gate [1] All typical values are measured at nominal VCC and Tamb =25 °C. [2] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; ∑(C L × VCC 2 × f o) = sum of outputs. [3] The condition is VI = GND to VCC. 13. AC waveforms Tamb = −40 °C to +125 °C tPHL, tPLH propagation delay input nA to output nY see Figure 5 VCC = 1.65 V to 1.95 V 1.0 - 10.8 ns VCC = 2.3 V to 2.7 V 0.5 - 5.5 ns VCC = 2.7 V 0.5 - 6.3 ns VCC = 3.0 V to 3.6 V 0.5 - 5.1 ns VCC = 4.5 V to 5.5 V 0.5 - 4.0 ns Table 9: Dynamic characteristics …continued GND = 0 V; test circuit see Figure 6. Symbol Parameter Conditions Min Typ Max Unit Measurement points are given in Table 10. Logic levels: VOL and VOH are typical output voltage drop that occur with the output load. Fig 5. Input nA to output nY propagation delay times Table 10: Measurement points Supply voltage Input Output VCC VM VM 1.65 V to 1.95 V 0.5 × VCC 0.5 × VCC 2.3 V to 2.7 V 0.5 × V CC 0.5 × V CC 2.7 V 1.5 V 1.5 V 3.0 V to 3.6 V 1.5 V 1.5 V 4.5 V to 5.5 V 0.5 × VCC 0.5 × V CC 001aaa725 nA input nY output tPLH tPHL GND VI VM VM VM VM VOH VOL |
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