EN29F800 datasheet(21/38 Pages) ETC

21 / 38 page

4800 Great America Parkway, Suite 202

Tel: 408-235-8680

Santa Clara, CA 95054

Fax: 408-235-8685

EN29F800

Rev. E, Issue Date: 2001/07/05

Table 7. DC Characteristics

(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5.0V ± 10%)

Notes:

(1) BYTE# and RESET# pin input buffers are always enabled so that they draw power if not at full CMOS

supply voltages

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

ILI

Input Leakage Current

≤ VIN ≤ Vcc

±5

µA

ILO

Output Leakage Current

≤ VOUT ≤ Vcc

±5

µA

Supply Current (read) TTL

(read) CMOS Byte

ICC1

(read) CMOS Word

CE# = VIL; OE# = VIH;

f = 5MHz

Supply Current (Standby - TTL)

CE# = VIH

0.4

1.0

ICC2

(Standby - CMOS)

(1)

BYTE# = RESET# =

CE# = Vcc ± 0.2V

0.3

5.0

µA

ICC3

Supply Current (Program or Erase)

Byte program, Sector or

Chip Erase in progress

VIL

Input Low Voltage

-0.5

0.8

VIH

Input High Voltage

Vcc ±

0.5

VOL

Output Low Voltage

IOL = 2 mA

0.45

Output High Voltage TTL

IOH = -2.5 mA

2.4

VOH

Output High Voltage CMOS

IOH = -100 µA

Vcc -

0.4V

VID

A9 Voltage (Electronic Signature)

10.5

11.5

IID

A9 Current (Electronic Signature)

A9 = VID

100

µA

VLKO

Supply voltage (Erase and

Program lock-out)

3.2

4.2

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