EN29F800 datasheet(33/38 Pages) ETC

Part #	EN29F800

Description	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only

PDF	38 Pages

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Manufacturer	ETC [List of Unclassifed Manufacturers]

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4800 Great America Parkway, Suite 202

Tel: 408-235-8680

Santa Clara, CA 95054

Fax: 408-235-8685

EN29F800

Rev. E, Issue Date: 2001/07/05

Figure 10. Alternate CE# Controlled Write Operation Timings

Notes:

PA = address of the memory location to be programmed.

PD = data to be programmed at byte address.

VA = Valid Address for reading program or erase status

Dout = array data read at VA

Shown above are the last two cycles of the program or erase command sequence and the last staus read cycle

Reset# shown to illustrate tRH measurement references. It cannot occur as shown during a valid command

sequence.

tWC

tRH

tAS

tAH

tWH

tGHEL

tCPH

tCP

tWS

tDH

tDS

tBUSY

tCWHWH1 / tCWHWH2 / tCWHWH3

Status

DOUT

0xA0 for Program

0x55 for Erase

PD for Program

0x30 for Sector Erase

0x10 for Chip Erase

Addresses

WE#

OE#

CE#

Data

RY/BY#

Reset#

PA for Program

SA for Sector Erase

0x555 for Chip Erase

0x555 for Program

0x2AA for Erase

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