M58WR032FT datasheet(1/86 Pages) STMICROELECTRONICS

Part #	M58WR032FT

Description	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory

PDF	86 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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November 2004

M58WR032FT

M58WR032FB

32 Mbit (2Mb x16, Multiple Bank, Burst)

1.8V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

–VDD = 1.7V to 2V for Program, Erase and

Read

–VDDQ = 1.7V to 2.24V for I/O Buffers

–VPP = 12V for fast Program (optional)

■

SYNCHRONOUS / ASYNCHRONOUS READ

–

Synchronous Burst Read mode: 66MHz

–

Asynchronous/ Synchronous Page Read

mode

–

Random Access: 60ns, 70ns, 80ns

■

SYNCHRONOUS BURST READ SUSPEND

■

PROGRAMMING TIME

–

8µs by Word typical for Fast Factory

Program

–

Double/Quadruple Word Program option

–

Enhanced Factory Program options

■

MEMORY BLOCKS

–

Multiple Bank Memory Array: 4 Mbit

Banks

–

Parameter Blocks (Top or Bottom

location)

■

DUAL OPERATIONS

–

Program Erase in one Bank while Read in

others

–

No delay between Read and Write

operations

■

BLOCK LOCKING

–

All blocks locked at Power up

–

Any combination of blocks can be locked

–WP for Block Lock-Down

■

SECURITY

–

128 bit user programmable OTP cells

–

64 bit unique device number

■

COMMON FLASH INTERFACE (CFI)

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

Figure 1. Package

■

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

–

Device Codes:

M58WR032FT (Top): 8814h

M58WR032FB (Bottom): 8815h

■

PACKAGE

–

Compliant with Lead-Free Soldering

Processes

–

Lead-Free Versions

FBGA

VFBGA56 (ZB)

7.7 x 9 mm

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