P0660ETFS datasheet(4/4 Pages) NIKOSEM

Part #	P0660ETFS

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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4 / 4 page

F-12-4

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

REV 1.0

P0660ETF:TO-220F

P0660ETFS:TO-220FS

Halogen-Free & Lead-Free

On-Resistance VS Temperature

TJ , Junction Temperature(˚C)

Source-Drain Diode Forward Voltage

Safe Operating Area

Single Pulse Maximum Power Dissipation

Single Pulse Time(s)

VDS, Drain-To-Source Voltage(V)

Transient Thermal Response Curve

T1 , Square Wave Pulse Duration[sec]

VSD, Source-To-Drain Voltage(V)

25℃

150℃

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.4

0.9

1.4

1.9

2.4

2.9

-50

-25

100

125

150

VGS=10V

ID=3A

100

150

200

250

300

350

400

0.001

0.01

0.1

100

Single Pulse

RθJC = 3.8˚C/W

TC=25˚C

100ms

10ms

1ms

0.01

0.1

100

1000

NOTE :

1.VGS= 10V

2.TC=25˚C

3.RθJC = 3.8˚C/W

4.Single Pulse

Operation in This Area

is Limited by RDS(ON)

↓

single pulse

Duty cycle=0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.0001

0.001

0.01

0.1

100

Notes

1.Duty cycle, D= t1 / t2

2.RthJC = 3.8 ℃/W

3.TJ-TC = P*RthJC(t)

4.RthJC(t) = r(t)*RthJC

P0660ETFS Datasheet(PDF) 4 Page - NIKO SEMICONDUCTOR CO., LTD.

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