P0660ETFS datasheet(1/4 Pages) NIKOSEM

Part #	P0660ETFS

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1

F-12-4

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

REV 1.0

P0660ETF:TO-220F

P0660ETFS:TO-220FS

Halogen-Free & Lead-Free

ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

±30

V

Continuous Drain Current

2

TC = 25 °C

ID

6

A

TC = 100 °C

3.8

Pulsed Drain Current

1

IDM

20

Avalanche Current

3

IAS

3.5

Avalanche Energy

3

EAS

61.2

mJ

Power Dissipation

TC = 25 °C

PD

32

W

TC = 100 °C

13

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

3.8

°C / W

Junction-to-Ambient

RJA

62.5

°C / W

1Pulse width limited by maximum junction temperature.

2Ensure that the channel temperature does not exceed 150°C.

3V

DD = 50V , L = 10mH ,starting TJ = 25°C.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

600

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

2

3

4

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±30V

±100

nA

Gate Voltage Drain Current

IDSS

VDS = 600V, VGS = 0V , TC = 25 °C

1

A

VDS = 480V, VGS = 0V , TC = 100 °C

10

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

600V

1.3Ω

6A

G

D

S

1. GATE

2. DRAIN

3. SOURCE

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P0660ETFS Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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