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P0660ETFS Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Part # P0660ETFS
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

P0660ETFS Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

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2
F-12-4
N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
REV 1.0
P0660ETF:TO-220F
P0660ETFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 10V, ID = 3A
1
1.3
Ω
Forward Transconductance
1
gfs
VDS = 10V, ID = 3A
10
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
953
pF
Output Capacitance
Coss
105
Reverse Transfer Capacitance
Crss
18
Total Gate Charge
2
Qg
VDD = 480V, ID =6A, VGS = 10V
34
nC
Gate-Source Charge
2
Qgs
4.4
Gate-Drain Charge
2
Qgd
14
Turn-On Delay Time
2
td(on)
VDD = 300V, ID =6A, RG= 25Ω
40
nS
Rise Time
2
tr
33
Turn-Off Delay Time
2
td(off)
130
Fall Time
2
tf
45
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
3
IS
6
A
Forward Voltage
1
VSD
IF =6A, VGS = 0V
1
V
Reverse Recovery Time
trr
IF =6A, dlF/dt = 100A / S
362
nS
Reverse Recovery Charge
Qrr
3
uC
1Pulse test : Pulse Width
 380 sec, Duty Cycle  2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.



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