GTVA261802FC-V1-R2 datasheet(1/8 Pages) CREE

Part #	GTVA261802FC-V1-R2

Description	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

GTVA261802FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 02, 2018-09-25

Thermally-Enhanced High Power RF GaN on SiC HEMT

170 W, 48 V, 2620 – 2690 MHz

Features

• GaN on SiC HEMT technology

• Input matched

• Typical Pulsed CW performance,combined outputs,

2690 MHz, 48 V, 10 µs pulse width, 10% duty cycle

- Output power at P3dB = 170 W

-DrainEfficiency@P3dB = 65.5%

-Gain@P3dB = 15 dB

• Capable of handling 10:1 VSWR @48V,180W(CW)

output power

• HumanBodyModelClass1A(perANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Description

The GTVA261802FC is a 170-watt GaN on SiC high electron mobility tran-

sistorforuseinmulti-standardcellularpoweramplifierapplications.

Itfeaturesinputmatching,highefficiency,andathermally-enhanced

packagewithearlessflange.

RF Characteristics

Single-carrier WCDMA Specifications (testedinWolfspeedproductiontestfixture)

VDD = 48 V, IDQ = 160 mA, POUT=50Wavg,ƒ=2690MHz,3GPP,channelbandwidth=3.84MHz,peak/average=10dB@0.01%CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

15.5

16.8

—

dB

DrainEfficiency

hD

40

43

—

%

Adjacent Channel Power Ratio

ACPR

—

–27

–24.5

dBc

OutputPAR@0.01%CCDF

OPAR

4.5

5.3

—

dB

GTVA261802FC

Package H-37248C-4

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

27

32

37

42

47

52

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 160 mA,

ƒ = 2690 MHz, 3GPP WCDMA signal,

PAR = 10 dB, 3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

gtva261802fc_g1

Similar Part No. - GTVA261802FC-V1-R2

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	GTVA261802FC-V1-R2	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27

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Manufacturer	Part #	Datasheet	Description
Cree, Inc	GTVA261701FA	591Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
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WOLFSPEED, INC.	GTVA261701FA-V1	750Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Rev. 05.1, 2022-1-27
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	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
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GTVA261802FC-V1-R2 Datasheet(PDF) 1 Page - Cree, Inc

GTVA261802FC-V1-R2 Datasheet(HTML) 1 Page - Cree, Inc

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