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GTVA261802FC-V1-R2 Datasheet(PDF) 2 Page - Cree, Inc

Part # GTVA261802FC-V1-R2
Description  Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
PDF  8 Pages
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

GTVA261802FC-V1-R2 Datasheet(HTML) 2 Page - Cree, Inc

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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 02, 2018-09-25
2
GTVA261802FC
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-source Breakdown Voltage
VGS = –8 V, ID = 10 mA
V(BR)DSS
150
—
—
V
Drain-source Leakage Current
VGS = –8 V, VDS = 10 V
IDSS
—
—
1.5
mA
Gate Threshold Voltage
VDS = 10 V, ID = 10 mA
VGS(th)
–3.8
–3.0
–2.3
V
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Operating Voltage
VDD
0
—
50
V
Gate Quiescent Voltage
VDS = 48 V, ID = 160 mA
VGS(Q)
–3.60
–2.97
–2.30
V
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source Voltage
VDSS
125
V
Gate-source Voltage
VGS
–10 to +2
V
Gate Current
IG
10.8
mA
Drain Current
ID
4
A
JunctionTemperature
TJ
225
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Operationabovethemaximumvalueslistedheremaycausepermanentdamage.Maximumratingsareabsoluteratings;exceeingonlyoneofthesevalues
maycauseirreversibledamagetothecomponent.Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectdevicereliability.For
reliablecontinuousoperation,thedeviceshouldbeoperatedwithintheoperatingvoltagerange(VDD)specifiedabove.
Thermal Chracteristics
Parameter
Symbol
Value
Unit
ThermalResistance(TCASE =70ºc,100WCW)
RqJC
1.06
°C/W
Ordering Information
Type and Version
Order Code
Package Description
Shipping
GTVA261802FC V1 R0
GTVA261802FC-V1-R0
H-37248C-4,earlessflange
Tape&Reel,50pcs
GTVA261802FC V1 R2
GTVA261802FC-V1-R2
H-37248C-4,earlessflange
Tape&Reel,250pcs



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