GTVA261802FC-V1-R2 datasheet(3/8 Pages) CREE

Part #	GTVA261802FC-V1-R2

Description	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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3 / 8 page

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 02, 2018-09-25

GTVA261802FC

Typical Performance (datatakenintestfixture)

-70

-60

-50

-40

-30

-20

-10

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 160 mA,

ƒ = 2690 MHz, 3GPP WCDMA signal,

PAR = 10 dB, BW = 3.84 MHz

ACPU

ACPL

Efficiency

gtva261802fc_g2

2550

2600

2650

2700

2750

Frequency (MHz)

Single-carrier WCDMA Broadband

Performance

VDD = 48 V, IDQ(MAIN) = 160 mA,

POUT = 47 dBm, 3GPP WCDMA signal,

PAR = 10 dB

Efficiency

Gain

gtva261802fc_g3

-30

-25

-20

-15

-35

-30

-25

-20

2550

2600

2650

2700

2750

Frequency (MHz)

Single-carrier WCDMA Broadband

Performance

VDD = 48 V, IDQ(MAIN) = 160 mA,

POUT = 47 dBm, 3GPP WCDMA signal,

PAR = 10 dB

ACPU

ACPL

IRL

gtva261802fc_g4

Output Power (dBm)

CW Performance

VDD = 48 V, IDQ(MAIN) = 160 mA

2620MHz Gain

2655MHz Gain

2690MHz Gain

2620MHz Eff

2655MHz Eff

2690MHz Eff

gtva261802fc_g5

GTVA261802FC-V1-R2 Datasheet(PDF) 3 Page - Cree, Inc

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