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S1T8825B01-R0B0 Datasheet(PDF) 7 Page - Samsung semiconductor

Part # S1T8825B01-R0B0
Description  1.3GHZ DUAL PLL
PDF  16 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

S1T8825B01-R0B0 Datasheet(HTML) 7 Page - Samsung semiconductor

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1.3GHZ DUAL PLL
S1T8825B
7
CHARGE PUMP OUTPUT POLARITY (CP)
In normal operation, the CP should be “0”.
In reverse operation, the CP should be “1”.
Depending upon VCO characteristics, CP should be set accordingly;
When VCO characteristics are like (1), CP should be set to low
When VCO characteristics are like (2), CP should be set to high.
CHARGE PUMP OUTPUT CURRENT (CP1, CP2)
The S1T8825B includes a constant current output type charge pump circuit.
Output current is varied according to control bit “CP1” and “CP2”.
In order to get high speed lock-up, select the best charge pump output current.
Control Bit
Charge Pump
Output Current
CP1
CP2
00
± 1600 µA
01
± 200 µA
10
± 400 µA
11
± 800 µA
(1)
(2)
VCO
Output
Frequency
VCO Characteristics
VCO Input Voltage



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