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S1T8825B01-R0B0 Datasheet(PDF) 1 Page - Samsung semiconductor

Part # S1T8825B01-R0B0
Description  1.3GHZ DUAL PLL
PDF  16 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

S1T8825B01-R0B0 Datasheet(HTML) 1 Page - Samsung semiconductor

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1.3GHZ DUAL PLL
S1T8825B
1
INTRODUCTION
The S1T8825B is a high performance dual frequency synthesizer with
two integrated high frequency pre-scalers for RF operation up to 1.3
GHz.
The S1T8825B is composed of modulus pre-scalers providing 64 and
66, no dead-zone PFD, selectable charge pump current, selectable
power down mode circuits, lock detector output, and loop filter’s time
constant switch.
It is fabricated using the ASP5HB Bi-CMOS process and is available
16-TSSOP with surface mount plastic packaging. Serial data is trans-
ferred into the S1T8825B via three-wire interface (CK, DATA, EN).
FEATURES
Two systems for receiver and transmitter
Very low operating current consumption: Icc = Typ. 7.0mA @ 3.0V
Low operating power supply voltage : 2.2 to 5.5V ( 200MHz to 550MHz Operating )
2.7 to 3.6V ( 550MHz to 1.3GHz Operating )
Modulus pre-scaler: 64 / 66
No dead-zone PFD
Colpitts type local oscillation
Selectable charge pump current
Selectable power down mode
TSSOP 16-pin package (0.65 mm pitch)
ORDERING INFORMATION
+: New Product
APPLICATIONS
Cordless telephone systems
Portable wireless communications (PCS)
Wireless Local Area Networks (WLANs)
Other wireless communication systems
Device
Package
Operating Temperature
+S1T8825B01-R0B0
16
−TSSOP−0044
−30 °C to + 85 °C
16
−TSSOP−0044


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