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M58LT128GST Datasheet(PDF) 62 Page - STMicroelectronics |
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M58LT128GST Datasheet(HTML) 62 Page - STMicroelectronics |
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62 / 98 page  11 DC and AC parameters M58LT128GST, M58LT128GSB 62/98 Table 24. Write AC Characteristics, Write Enable Controlled Symbol Alt Parameter(1) 1. Sampled only, not 100% tested. M58LT128GST, M58LT128GSB Unit 110 tAVAV tWC Address Valid to Next Address Valid Min 110 ns tAVLH Address Valid to Latch Enable High Min 11 ns tAVWH (2) 2. These timings are meaningful only if Latch Enable, L, is always kept Low, VIL. Address Valid to Write Enable High Min 50 ns tDVWH tDS Data Valid to Write Enable High Min 50 ns tELLH Chip Enable Low to Latch Enable High Min 11 ns tELWL tCS Chip Enable Low to Write Enable Low Min 0 ns tELQV Chip Enable Low to Output Valid Min 110 ns tELKV Chip Enable Low to Clock Valid Min 9 ns tGHWL Output Enable High to Write Enable Low Min 17 ns tLHAX Latch Enable High to Address Transition Min 9 ns tLLLH Latch Enable Pulse Width Min 11 ns tWHAV (2) Write Enable High to Address Valid Min 0 ns tWHAX (2) Write Enable High to Address Transition Min 0 ns tWHDX tDH Write Enable High to Input Transition Min 0 ns tWHEH tCH Write Enable High to Chip Enable High Min 0 ns tWHEL (3) 3. tWHEL has the values shown when reading in the targeted bank. System designers should take this into account and may insert a software No-Op instruction to delay the first read in the same bank after issuing a command. If it is a Read Array operation in a different bank tWHEL is 0ns. Write Enable High to Chip Enable Low Min 25 ns tWHLL Write Enable High to Latch Enable Low Min 0 ns tWHWL tWPH Write Enable High to Write Enable Low Min 25 ns tWLWH tWP Write Enable Low to Write Enable High Min 50 ns tQVVPL Output (Status Register) Valid to VPP Low Min 0 ns tVPHWH tVPS VPP High to Write Enable High Min 200 ns tWHVPL Write Enable High to VPP Low Min 200 ns |
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