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STM32F722IC Datasheet(PDF) 144 Page - STMicroelectronics |
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STM32F722IC Datasheet(HTML) 144 Page - STMicroelectronics |
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144 / 229 page ![]() Electrical characteristics STM32F722xx STM32F723xx 144/229 DS11853 Rev 6 tME Mass erase time Program/erase parallelism (PSIZE) = x 8 - 7718 9883 ms Program/erase parallelism (PSIZE) = x 16 - 4869 6379 Program/erase parallelism (PSIZE) = x 32 - 3503 5180 Vprog Programming voltage 32-bit program operation 2.7 - 3.6 V 16-bit program operation 2.1 - 3.6 V 8-bit program operation 1.7 - 3.6 V 1. Guaranteed by characterization results. 2. The maximum programming time is measured after 10 K erase operations. Table 54. Flash memory programming with VPP Symbol Parameter Conditions Min(1) Typ Max(1) 1. Guaranteed by design. Unit tprog Double word programming TA = 0 to +40 °C VDD = 3.3 V VPP = 8.5 V -16 100(2) 2. The maximum programming time is measured after 10 K erase operations. µs tERASE16KB Sector (16 KB) erase time - 180 - ms tERASE128KB Sector (128 KB) erase time - 900 - tERASE64KB Sector (64 KB) erase time - 450 - tME Mass erase time - 6.9 - s Vprog Programming voltage - 2.7 - 3.6 V VPP VPP voltage range - 7 - 9 V IPP Minimum current sunk on the VPP pin -10 - - mA tVPP(3) 3. VPP should only be connected during programming/erasing. Cumulative time during which VPP is applied - - - 1 hour Table 55. Flash memory endurance and data retention Symbol Parameter Conditions(1) Value Unit Min(2) NEND Endurance TA = –40 to +85 °C (6 suffix versions) TA = –40 to +105 °C (7 suffix versions) 10 kcycles tRET Data retention 1 kcycle(3) at TA = 85 °C 30 Years 1 kcycle(3) at TA = 105 °C 10 10 kcycles(3) at TA = 55 °C 20 Table 53. Flash memory programming (continued) Symbol Parameter Conditions Min(1) Typ Max(1) Unit |
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