STM32G071C8 datasheet(73/133 Pages) STMICROELECTRONICS

73 / 133 page

DS12232 Rev 3

73/133

STM32G071x8/xB

Electrical characteristics

106

Figure 20. HSI16 frequency vs. temperature

Low-speed internal (LSI) RC oscillator

tstab(HSI16)(2)

HSI16 oscillator stabilization time

μs

IDD(HSI16)(2)

HSI16 oscillator power consumption

155

190

μA

1. Based on characterization results, not tested in production.

2. Guaranteed by design.

Table 41. HSI16 oscillator characteristics(1) (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

MSv39299V1

15.6

15.7

15.8

15.9

16.1

16.2

16.3

16.4

MHz

min

mean

max

+1%

-1%

+2%

-2%

+1.5%

-1.5%

-40

-20

100

120 °C

Table 42. LSI oscillator characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max Unit

fLSI

LSI frequency

VDD = 3.0 V, TA = 30 °C

31.04

32.96

kHz

VDD = 1.62 V to 3.6 V, TA = -40 to

125 °C

29.5

tSU(LSI)(2)

LSI oscillator start-up time

130

μs

tSTAB(LSI)(2) LSI oscillator stabilization time 5% of final frequency

125

180

μs

IDD(LSI)(2)

LSI oscillator power

consumption

110

180

1. Based on characterization results, not tested in production.

2. Guaranteed by design.

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