TP2435 datasheet(3/14 Pages) MICROCHIP

3 / 14 page



2019 Microchip Technology Inc.

DS20005961A-page 3

TP2435

AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA= 25°C unless otherwise specified. Specification is obtained by characterization and

is not 100% tested.

Parameter

Sym. Min. Typ. Max. Unit

Conditions

Forward Transconductance

GFS 125

—

mmho VDS = –25V, ID = –350 mA

Input Capacitance

CISS

—

200

VGS = 0V,

VDS = –25V,

f = 1 MHz

Common Source Output Capacitance

COSS —

—

Reverse Transfer Capacitance

CRSS

—

Turn-On Delay Time

td(ON) —

—

VDD = –25V,

ID = –250 mA,

RGEN = 25Ω

Rise Time

—

Turn-Off Delay Time

td(OFF) —

—

Fall Time

—

DIODE PARAMETER

Diode Forward Voltage Drop

VSD

—

–1.5

VGS = 0V, ISD = –750 mA (Note 1)

Reverse Recovery Time

trr

—

300

—

VGS = 0V, ISD = –750 mA

Note 1: Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty

cycle

TEMPERATURE SPECIFICATIONS

Parameter

Sym. Min. Typ. Max. Unit

Conditions

TEMPERATURE RANGE

Operating Ambient Temperature

–55

—

+150

°C

Storage Temperature

–55

—

+150

°C

PACKAGE THERMAL RESISTANCE

3-lead SOT-89

JA

—

133

—

°C/W

Note 1

Note 1: Mounted on an FR5 board, 25 mm x 25 mm x 1.57 mm

THERMAL CHARACTERISTICS

Package

ID (Note 1)

(Continuous)

(mA)

(Pulsed)

(A)

Power Dissipation

at TA = 25°C

(Note 2)

(W)

IDR (Note 1)

(mA)

IDRM

(A)

3-lead SOT-89

–231

–1.1

1.6

–231

–1.1

Note 1: ID (continuous) is limited by maximum rated TJ.

2: Mounted on an FR5 board, 25 mm x 25 mm x 1.57 mm

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