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TP2435 Datasheet(PDF) 5 Page - Microchip Technology |
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TP2435 Datasheet(HTML) 5 Page - Microchip Technology |
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5 / 14 page ![]() 2019 Microchip Technology Inc. DS20005961A-page 5 TP2435 FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to-Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: VGS(th) and RDS Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. T j ( OC) 1.2 1.0 0.8 BV @ -250µA -50 0 50 100 150 V GS (volts) T A = -55 OC 125OC 25OC V DS = -15V -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.0 -1.0 -2.0 -3.0 -4.0 V DS (volts) 400 200 100 0 0 -10 -20 -30 -40 f = 1.0MHz C ISS C OSS C RSS V GS = -4.5V I D (amperes) V GS = -10V 0 -0.3 -0.6 -0.9 -1.2 -1.5 -1.8 50 40 30 20 10 0 T j ( OC) 2.4 2.0 1.6 1.2 0.8 0 V GS(th) @ -1mA R DS(ON) @ -10V, -0.5A 1.2 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 Q G (nanocoulombs) -10 -8 -6 -4 -2 0 0 1 2 3 4 5 6 7 V DS = -40V V DS = -20V I D = -500mA |
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