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IRFS830 Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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IRFS830 Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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3 / 4 page ![]() www.doingter.cn — 3 — Trr Reverse Recovery Time --- 215 --- Ns qrr Reverse Recovery Charge --- 1.26 --- nc Typical Characteristics: (T C=25℃ unless otherwise noted) IS= 5A,V GS =0V diF/dt=100A/ μs (Note3) Notes : 1, L= 27mH, IAS=5A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature IRFS830 |
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