IRFS830 datasheet(1/4 Pages) DOINGTER

Part #	IRFS830

Description	N-Channel MOSFET uses advanced trench technology

PDF	4 Pages

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Manufacturer	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

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valanche Current

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=500V,ID=5A,RDS(ON)<1.4Ω@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

500

V

VGS

Gate-Source Voltage

±30

V

ID

Continuous Drain Current-

TC=25℃

5

A

Continuous Drain Current-TC=100℃

2.2

EAS

Single Pulse Avalanche Energy

1

270

mJ

PD

Power Dissipation

35

W

IAR

5

A

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

3.45

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

110

D S

G

2

IRFS830

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IRFS830 Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

IRFS830 Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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