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LM6911 Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LM6911
Description  These P-Channel enhancement mode power field effect transistors are using trench DMOS technology
PDF  5 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM6911 Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Electrical Characteristics (TJ=25℃ unless otherwise noted)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
V
GS=0V ID=-250μA
-60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS=-60V,VGS=0V
1
μA
I
GSS
Gate-Body Leakage Current
V
GS=±20V,VDS=0V
±100
nA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID=-250μA
-1.0
-1.6
-2.5
V
R
DS(ON)
Drain-Source On-State Resistance
V
GS=-10V, ID=-2A
160
190
mΩ
V
GS=-4.5V, ID=-1.5A
200
240
mΩ
DYNAMIC PARAMETERS
Clss
Input Capacitance
V
DS=-30V,VGS=0V ,
F=1.0MHz
426
pF
Coss
Output Capacitance
35
pF
Crss
Reverse Transfer Capacitance
20
pF
SWITCHING PARAMETERS
td(on)
Turn-on Delay Time
VDS=-30V,ID=-1A
, V
GS=-10V,
R
G=6Ω
5.2
nS
tr
Turn-on Rise Time
19
nS
td(off)
Turn-Off Delay Time
35
nS
tf
Turn-Off Fall Time
10.6
nS
Qg
Total Gate Charge
V
DS=-30V,ID=-3A
, VGS=-10V
5.2
nC
Qgs
Gate-Source Charge
19
nC
Qgd
Gate-Drain Charge
35
nC
VSD
Diode Forward Voltage
VGS=0V,ISD=-1A
0.72
1.4
V
Note：
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
LM6911
Rev 2.0 :
www.leiditech.com
12.01.2019
2/5



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