LM6911 datasheet(1/5 Pages) LEIDITECH

Part #	LM6911

Description	These P-Channel enhancement mode power field effect transistors are using trench DMOS technology

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

Logo

1 / 5 page

General Description

These P-Channel enhancement mode power field

effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior

switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency fast switching

applications.

Features

VDS

ID

(at VGS=-10V)

RDS(ON) (at VGS=-10V)

-60V

-2A

190mΩ(Max)

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

VDS

-60

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

TC=25°C

I

D

-2

A

TC=100°C

I

D

-1.25

A

Maximum Power Dissipation

P

D

1.56

W

Junction and Storage Temperature Range

T

J,TSTG

-55 To 150

℃

Thermal Characteristics

Parameter

Symbol

Typ

Max

Unit

Thermal Resistance junction-case

R

θJc

1.1

℃

/W

Thermal Resistance junction-to-Ambient

R

θJA

80

℃

/W

D

G

S

D

G

S

SOT23

IDM

Drain Current – Pulsed1

--8

A

LM6911

Rev 2.0 :

www.leiditech.com

12.01.2019

1/5

Similar Part No. - LM6911

Manufacturer	Part #	Datasheet	Description
Seoul Semiconductor	LM691	376Kb / 14P	INFRARED LAMP LED
	LM691	360Kb / 13P	CYAN LAMP LED
	LM691	392Kb / 14P	RED OVAL LAMP LED
	LM691	392Kb / 14P	RED OVAL LAMP LED
	LM691	378Kb / 14P	RED LAMP LED

More results

Similar Description - LM6911

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	FQD6N50C	687Kb / 9P	These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
Stanson Technology	STP4403	321Kb / 6P	STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP4931	334Kb / 6P	STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP9235	331Kb / 6P	STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP9434	314Kb / 6P	STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Fairchild Semiconductor	FDPF10N60NZ	439Kb / 10P	These N-Channel enhancement mode power field effect transistors are produced using Fairchild?셲 proprietary, planar stripe, DMOS technology.
Shenzhen Huazhimei Semi...	HM603BK	938Kb / 8P	N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
Shenzhen Huazhimei Semi...	HM609BK	2Mb / 8P	N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
SHIKUES Electronics	SDW2065	963Kb / 5P	These dual N Channel enhancement mode power fieldeffect transistors are using trench DMOS technology.
SHIKUES Electronics	SDW3045	1,003Kb / 5P	N-Channel enhancement mode power field effect transistors are using trench DMOS technology

More results

LM6911 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LM6911 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Similar Part No. - LM6911

Similar Description - LM6911

Html Pages

1 2 3 4 5

Datasheet Download

Link URL