| Manufacturer | Part # | Datasheet | Description |
Fairchild Semiconductor |
FQD6N50C
|
687Kb / 9P |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
|
Stanson Technology |
STP4403
|
321Kb / 6P |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
|
STP4931
|
334Kb / 6P |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
|
STP9235
|
331Kb / 6P |
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
|
STP9434
|
314Kb / 6P |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Fairchild Semiconductor |
FDPF10N60NZ
|
439Kb / 10P |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild?셲 proprietary, planar stripe, DMOS technology.
|
Shenzhen Huazhimei Semi... |
HM603BK
|
938Kb / 8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
|
|
HM609BK
|
2Mb / 8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
|
SHIKUES Electronics |
SDW2065
|
963Kb / 5P |
These dual N Channel enhancement mode power fieldeffect transistors are using trench DMOS technology.
|
|
SDW3045
|
1,003Kb / 5P |
N-Channel enhancement mode power field effect transistors are using trench DMOS technology
|
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