UTD408L-K08-3030-R datasheet(1/4 Pages) DOINGTER

Part #	UTD408L-K08-3030-R

Description	N-Channel MOSFET uses advanced trench technology

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Manufacturer	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

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Description：

This N-Channel MOSFET uses advanced trench technology

to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

Features：

1) VDS=30V,ID=25A,RDS(ON)=18mΩ@VGS=10V

2) Improved dv/dt capability

3) Fast switching

4) 100% EAS Guaranteed

5) Green Device Available.

Absolute Maximum Ratings：(T

C=25℃

unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-Continuous (TC=25℃)

25

A

Continuous Drain Current-TC=100℃

16

IDM

Drain Current – Pulsed

1

100

A

EAS

Single Pulse Avalanche Energy

2

32

mJ

PD

Power Dissipation (TC=25℃)

21

W

Power Dissipation – Derate above 25℃

0.17

W/℃

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

S

S1

S

G

D

RƟJC

Thermal Resistance,Junction to Case

6

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

62

UTD408L-K08-3030-R

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UTD408L-K08-3030-R Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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