| Electronic Components Datasheet Search |
|
UTD408L-K08-3030-R Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
|
|
|||||||||||||||||||||||||||||
UTD408L-K08-3030-R Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
|
2 / 4 page ![]() www.doingter.cn — 2 — Electrical Characteristics:(T C=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Dra i n-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Dra i n-Source Leakage Current VGS=0V, VDS=30V, TJ=25℃ --- --- 1 μA VGS=0V, VDS=24V, TJ=125℃ 10 μA IGSS Ga te-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Vol tage VGS=VDS, ID=250μA 1.2 1.6 2.5 V RDS(ON) Dra i n-Source On Resistance 3 VGS=10V,ID=12A --- 14 18 mΩ VGS=4.5V,ID=8A --- 20 28 GFS Forwa rd Tra nsconductance VDS=10V, ID=6A --- 6.5 --- S Dynamic Characteristics Ciss Input Ca pacitance VDS=25V, VGS=0V, f=1MHz --- 345 500 pF Coss Output Ca pacitance --- 55 80 Crss Reverse Tra nsfer Ca pacitance --- 32 45 Switching Characteristics td(on) Turn-On Delay Ti me 3.4 VDD=15V , VGS=10V , RG=6,ID=1A --- 2.8 5 ns tr Ri s e Time 3.4 --- 7.2 14 ns td(off) Turn-Off Delay Ti me 3.4 --- 15.8 30 ns tf Fa ll Ti me 3.4 --- 4.6 9 ns Qg Tota l Gate Charge 3.4 --- 4.1 8 nC UTD408L-K08-3030-R |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |