K

NC

A

D²PAK HV

A1

K

A

Product label

Features

•

No or negligible reverse recovery

•

Switching behavior independent of temperature

•

Robust high voltage periphery

•

•

•

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

•

ECOPACK2 compliant

Applications

•

On board charger (OBC)

•

DC/DC

•

PFC

Description

This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is

manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.

The STPSC10H12G2-TR will boost performances in hard switching conditions. Its

high forward surge capability ensures good robustness during transient phases.

Product status link

STPSC10H12G2-TR

Product summary

10 A

1200 V

175 °C

1.35 V

1200 V, 10 A, silicon carbide power Schottky diode

STPSC10H12G2-TR

Datasheet

DS13404 - Rev 1 - August 2020

For further information contact your local STMicroelectronics sales office.

www.st.com