STPSC10H12G2-TR datasheet(2/11 Pages) STMICROELECTRONICS

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Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)

1200

IF(RMS)

Forward rms current

IF(AV)

Average forward current δ = 0.5, square wave

Tc = 155 °C, DC current

IFRM

Repetitive peak forward current

Tc =155 °C, Tj = 175 °C, δ = 0.1

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 150 °C

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature(1)

-40 to +175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Value

Unit

Typ.

Max.

Rth(j-c)

Junction to case

0.65

0.9

°C/W

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 150 °C

400

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

1.35

1.50

Tj = 150 °C

1.75

2.25

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 500 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

•

P = 1.03 x IF(AV) + 0.122 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses:

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPSC10H12G2-TR

Characteristics

DS13404 - Rev 1

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