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MCP6V51T-E/MS Datasheet(PDF) 23 Page - Microchip Technology

Part # MCP6V51T-E/MS
Description  45V, 2 MHz Zero-Drift Op Amp with EMI Filtering
PDF  43 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP6V51T-E/MS Datasheet(HTML) 23 Page - Microchip Technology

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 2018 Microchip Technology Inc.
DS20006136A-page 23
MCP6V51
It is also possible to connect the diodes to the left of the
R1 and R2 resistors. In this case, the currents through
the D1 and D2 diodes need to be limited by some other
mechanism. The resistors then serve as in-rush current
limiters; the DC current into the input pins (VIN+ and
VIN-) should be very small.
A significant amount of current can flow out of the
inputs (through the ESD diodes) when the Common
Mode Voltage (VCM) is below ground (VSS); see
Figure 2-16.
4.2.2
INTEGRATED EMI FILTER
The MCP6V51 has an integrated low-pass filter in its
inputs for the dedicated purpose of reducing any
electromagnetic or RF interference (EMI, RFI). The on-
chip filter is designed as a 2nd-order RC low-pass,
which
sets a bandwidth limit of approximately
115 MHz
and
attenuates
the
high-frequency
interference. Performance results of the MCP6V51’s
EMI rejection ratio (EMIRR) under various conditions
can be seen in Figure 2-31 and Figure 2-33.
4.2.3
RAIL-TO-RAIL OUTPUT
The Output Voltage Range of the MCP6V51 zero-drift
op amps is typically VDD - 100 mV, and VSS +50 mV
when RL =10kΩ is connected to VDD/2 and
VDD = 45V. Refer to Figure 2-18, Figure 2-19 and
Figure 2-20 for more information.
4.2.4
THERMAL SHUTDOWN
Under certain operating conditions, the MCP6V51
amplifier can be subjected to a rise of its die
temperature above the specified maximum junction
temperature of 150°C. To control possible overheating
and damage, the MCP6V51 amplifier has internal
thermal shutdown circuitry. Especially when operating
with the maximum supply voltage of 45V, observe that
the ambient temperature and/or the amplifier’s output
current are such that the junction temperature remains
below the specified limit. To estimate the junction
temperature (TJ) consider these factors: the total power
dissipation of the device (PD) and the ambient
temperature at the device package (TA), and use
Equation 4-1 below.
EQUATION 4-1:
To derive the Power dissipation of the device, add the
terms for the devices’ quiescent power and the load
power as shown in Equation 4-2:
EQUATION 4-2:
This assumes that the device is sourcing the load
current, i.e. current flowing from the VDD supply into the
load. Use the term (IOUT ×(VOUT -VSS)) when the
device is sinking current. Note that this simple example
assumes a constant (DC) signal current flow.
The thermal shutdown circuitry activates as soon as
the junction temperature reaches approximately
+175°C causing the amplifier’s output stage to be tri-
stated (high-impedance) effectively disabling any
output current flow. The amplifier will remain in this
disabled state until the junction temperature has cooled
down to approximately +160°C. At this point the
thermal shutdown circuitry will enable the output stage
of the MCP6V51 amplifier and the device will resume
normal operation.
If a fault condition persists, for example the amplifier’s
output (VOUT) is shorted causing excessive output
current, the thermal shutdown circuity may be triggered
again and the previously described cycle repeats. This
may continue until the fault condition is removed.
It should be noted that the thermal shutdown feature of
the MCP6V51 does not guarantee that the device will
remain undamaged when operated under stress
conditions during which the device is placed into the
shutdown mode.
4.3
Application Tips
4.3.1
INPUT OFFSET VOLTAGE OVER
TEMPERATURE
Table DC Electrical Specifications gives both the
linear and quadratic temperature coefficients (TC1 and
TC2) of input offset voltage. The input offset voltage, at
any temperature in the specified range, can be
calculated as follows:
EQUATION 4-3:
TJ
PD JA TA
+
=
Where:
JA = the thermal resistance between the die
and the ambient environment, as
shown in Temperature
Specifications
PD
VDD VSS
–
 I
Q
IOUT
VDD VOUT
–

+
=
VOS TA

VOS TC1TTC2T
2
++
=
Where:
T=
TA –25°C
VOS(TA) = Input offset voltage at TA
VOS = Input offset voltage at +25°C
TC1 = Linear temperature coefficient
TC2 = Quadratic temperature coefficient



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