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MPC5601PEF0MLH4R Datasheet(PDF) 64 Page - NXP Semiconductors |
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MPC5601PEF0MLH4R Datasheet(HTML) 64 Page - NXP Semiconductors |
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64 / 95 page ![]() MPC5602P Microcontroller Data Sheet, Rev. 6 Freescale Semiconductor 64 3.15.2 Flash memory power supply DC characteristics Table 32 shows the power supply DC characteristics on external supply. Table 30. Flash memory module life Symbol C Parameter Conditions Value Unit Min Typ P/E C Number of program/erase cycles per block for 16 KB blocks over the operating temperature range (TJ) — 100,000 — cycles P/E C Number of program/erase cycles per block for 32 KB blocks over the operating temperature range (TJ) — 10,000 100,000 cycles P/E C Number of program/erase cycles per block for 128 KB blocks over the operating temperature range (TJ) — 1,000 100,000 cycles Retention C Minimum data retention at 85 °C average ambient temperature1 1 Ambient temperature averaged over duration of application, not to exceed recommended product operating temperature range. Blocks with 0–1,000 P/E cycles 20 — years Blocks with 10,000 P/E cycles 10 — years Blocks with 100,000 P/E cycles 5 — years Table 31. Flash memory read access timing Symbol C Parameter Conditions1 1 VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified Max value Unit fmax C Maximum working frequency for code flash memory at given number of wait states in worst conditions 2 wait states 66 MHz 0 wait states 18 fmax C Maximum working frequency for data flash memory at given number of wait states in worst conditions 8 wait states 66 MHz Table 32. Flash memory power supply DC electrical characteristics Symbol C Parameter Conditions1 1 VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified. Value Unit Min Typ Max IFLPW CC D Sum of the current consumption on VDD_HV_IOx and VDD_LV_CORx during low-power mode Code flash memory — — 900 µA IFPWD CC D Sum of the current consumption on VDD_HV_IOx and VDD_LV_CORx during power-down mode Code flash memory — — 150 µA Data flash memory — — 150 |
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