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AS4LC256K16EO Datasheet(PDF) 6 Page - Alliance Semiconductor Corporation

Part # AS4LC256K16EO
Description  3.3V 256K X 16 CMOS DRAM (EDO)
PDF  25 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC256K16EO Datasheet(HTML) 6 Page - Alliance Semiconductor Corporation

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®
AS4LC256K16EO
4/11/01; V.1.1
Alliance Semiconductor
P. 6 of 25
Write cycle
Read-modify-write cycle
Std Symbol Parameter
-35
-45
-60
Unit
Notes
MinMax
MinMax
MinMax
tASC
Column address setup time
0
–
0
–
0
–
ns
tCAH
Column address hold time
5
–
6
–
10
–
ns
tAWR
Column address hold time to RAS
28
–
35
–
40
–
ns
tWCS
Write command setup time
0
–
0
–
0
–
ns
11
tWCH
Write command hold time
0
–
0
–
0
–
ns
11
tWCR
Write command hold time to RAS
28
–
35
–
40
–
ns
tWP
Write command pulse width
5
–
6
–
10
–
ns
tRWL
Write command to RAS lead time
11
–
12
–
12
–
ns
tCWL
Write command to CAS lead time
11
–
12
–
12
–
ns
tDS
Data-in setup time
0
–
0
–
0
–
ns
12
tDH
Data-in hold time
5
–
6
–
10
–
ns
12
tDHR
Data-in hold time to RAS
28
–
35
–
45
–
ns
Std Symbol Parameter
-35
-45
-60
Unit
Notes
Min
Max
Min
Max
Min
Max
tRWC
Read-write cycle time
105
–
115
–
120
–
ns
tRWD
RAS to WE delay time
54
–
58
–
60
–
ns
11
tCWD
CAS to WE delay time
28
–
30
–
30
–
ns
11
tAWD
Column address to WE delay time
35
–
38
–
40
–
ns
11
tRSH(W)
CAS to RAS hold time (write)
10
–
10
–
12
–
ns
tCAS(W)
CAS pulse width (write)
15
–
15
–
15
–
ns



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