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IMX8MMIEC Datasheet(PDF) 28 Page - NXP Semiconductors |
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IMX8MMIEC Datasheet(HTML) 28 Page - NXP Semiconductors |
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28 / 92 page ![]() i.MX 8M Mini Applications Processor Datasheet for Industrial Products, Rev. 1, 07/2020 28 NXP Semiconductors Electrical characteristics 3.4.2 OSC32K An external 32.768 kHz oscillator is necessary. 3.5 General purpose I/O (GPIO) DC parameters Table 21 shows DC parameters for GPIO pads. The parameters in Table 21 are guaranteed per the operating ranges in Table 10, unless otherwise noted. 1 Actual working drive level is depend on real design. Please contact crystal vendor for selecting drive level of crystal. Table 21. GPIO DC parameters Parameter Symbol Test Conditions Min Typ Max Unit High-level output voltage VOH (1.8 V) IOH = 1.6/3.2/6.4/9.6 mA (1.8 V) IOH = 2/4/8/12 mA (3.3 V) 0.8 x VDD — VDD V VOH (3.3 V) 0.8 x VDD — VDD V Low-level output voltage VOL (1.8 V) IOL = 1.6/3.2/6.4/9.6 mA (1.8 V) IOL = 2/4/8/12 mA (3.3 V) 0 — 0.2 x VDD V VOL (3.3 V) 0 — 0.2 x VDD V High-level input voltage VIH — 0.7 x VDD — VDD + 0.3 V Low-level input voltage VIL — -0.3 — 0.3 x VDD V Pull-up resistor — VDD = 1.65 - 1.95V Temp = -40 - 105 oC 12 22 49 K Pull-down resistor — 13 23 48 K Pull-up resistor — VDD = 2.25 - 2.75V Temp = -40 - 105 oC 13 24 69 K Pull-down resistor — 9.1 33 69 K Pull-up resistor1 1 Does not support internal pull-up or pull-down for 3.3 V IOs. —VDD = 3.0 - 3.6V Temp = -40 - 105 oC —— — K Pull-down resistor1 —— — — K High level input current IIH — -4 — 4 A Low level input current IIL — -0.7 — 0.7 A Table 22. Additional leakage parameters Parameter Symbol Pins Min Max Unit High level input current IIH PCIE_RXN, USBx_Dx -30 30 A PCIE_CLK -8 8 MIPI_CSI -4 4 |
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