The following table lists the dynamic characteristics per SiC MOSFET of the MSCSM170AM058CT6LIAG device.

Table 1-3. Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Input capacitance

f = 1 MHz

—

19.8

—

nF

Output capacitance

—

0.9

—

Reverse transfer

capacitance

—

0.06

—

Total gate charge

—

1068

—

nC

Gate-Source charge

—

294

—

Gate-Drain charge

—

162

—

Turn-on delay time

—

41

—

ns

Rise time

—

48

—

Turn-off delay time

—

114

—

Fall time

30

—

Turn-on energy

9.4

—

mJ

Turn-off energy

3.1

—

Internal gate resistance

—

1.27

—

Ω

Junction-to-case thermal resistance

—

—

0.09

°C/W

The following table lists the body diode ratings and characteristics per SiC MOSFET of the

MSCSM170AM058CT6LIAG device.

Table 1-4. Body Diode Ratings and Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Diode forward voltage

—

3.7

—

V

—

3.9

—

Reverse recovery time

—

27

—

ns

Reverse recovery charge

—

3.9

—

µC

Reverse recovery current

—

276

—

A

MSCSM170AM058CT6LIAG

Electrical Specifications

Datasheet

DS00003946A-page 4