1.2

SiC Diode Ratings and Characteristics (Per SiC Diode)

The following table lists the SiC diode ratings and characteristics of the MSCSM170AM058CT6LIAG device.

Table 1-5. SiC Diode Ratings and Characteristics (Per SiC Diode)

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Peak repetitive reverse voltage

—

—

1700

V

Reverse leakage current

—

60

1200

µA

—

900

—

DC forward current

—

—

180

—

A

Diode forward voltage

—

1.5

1.8

V

—

2.3

—

Total capacitive charge

—

1380

—

nC

C

Total capacitance

—

1002

—

pF

—

828

—

Junction-to-case thermal resistance

—

—

0.1

°C/W

1.3

Thermal and Package Characteristics

The following table lists the thermal and package characteristics of the MSCSM170AM058CT6LIAG device.

Table 1-6. Thermal and Package Characteristics

Symbol

Characteristic

Min

Max

Unit

RMS isolation voltage, any terminal to case t = 1 min, 50 Hz/60 Hz 4000

—

V

Operating junction temperature range

–40

175

°C

Recommended junction temperature under switching conditions

–40

Storage case temperature

–40

125

Operating case temperature

–40

125

Torque

Mounting torque

For

terminals

M2.5

0.4

0.6

N.m

M4

2

3

M5

2

3.5

To heatsink

M6

3

5

—

3

nH

Wt

Package weight

—

320

g

MSCSM170AM058CT6LIAG

Electrical Specifications

Datasheet

DS00003946A-page 5