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STM32H750VB Datasheet(PDF) 119 Page - STMicroelectronics |
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STM32H750VB Datasheet(HTML) 119 Page - STMicroelectronics |
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119 / 335 page ![]() DS12556 Rev 5 119/334 STM32H750VB STM32H750ZB STM32H750IB STM32H750XB Electrical characteristics (rev Y) 311 Figure 16. Typical application with an 8 MHz crystal 1. REXT value depends on the crystal characteristics. Low-speed external clock generated from a crystal/ceramic resonator The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic resonator oscillator. All the information given in this paragraph are based on characterization results obtained with typical external components specified in Table 43. In the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy). ai17530b OSC_OU T OSC_IN fHSE CL1 RF STM32 8 MHz resonator Resonator with integrated capacitors Bias controlled gain REXT(1) CL2 Table 43. Low-speed external user clock characteristics(1) Symbol Parameter Operating conditions(2) Min Typ Max Unit F Oscillator frequency - - 32.768 - kHz IDD LSE current consumption LSEDRV[1:0] = 00, Low drive capability -290 - nA LSEDRV[1:0] = 01, Medium Low drive capability -390 - LSEDRV[1:0] = 10, Medium high drive capability -550 - LSEDRV[1:0] = 11, High drive capability -900 - Gmcritmax Maximum critical crystal gm LSEDRV[1:0] = 00, Low drive capability -- 0.5 µA/V LSEDRV[1:0] = 01, Medium Low drive capability - - 0.75 LSEDRV[1:0] = 10, Medium high drive capability -- 1.7 LSEDRV[1:0] = 11, High drive capability -- 2.7 tSU(3) Startup time VDD is stabilized - 2 - s 1. Guaranteed by design. |
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