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STM32H750VB Datasheet(PDF) 122 Page - STMicroelectronics

Part # STM32H750VB
Description  32-bit Arm® Cortex®-M7 480MHz MCUs, 128 Kbyte Flash, 1 Mbyte RAM, 46 com. and analog interfaces, crypto
PDF  335 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H750VB Datasheet(HTML) 122 Page - STMicroelectronics

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Electrical characteristics (rev Y)
STM32H750VB STM32H750ZB STM32H750IB STM32H750XB
122/334
DS12556 Rev 5
Low-speed internal (LSI) RC oscillator
6.3.10
PLL characteristics
The parameters given in Table 48 are derived from tests performed under temperature and
VDD supply voltage conditions summarized in Table 22: General operating conditions.
ΔTEMP (CSI)
CSI oscillator frequency drift over
temperature
TJ = 0 to 85 °C
-
−3.7(3)
4.5(3)
%
TJ = −40 to 125 °C
-
−11(3)
7.5(3)
DVDD (CSI)
CSI oscillator frequency drift over
VDD
VDD = 1.62 to 3.6 V
-
−
0.06
0.06
%
tsu(CSI)
CSI oscillator startup time
-
-
1
2
µs
tstab(CSI)
CSI oscillator stabilization time
(to reach ±3% of fCSI)
-
-
4
8
cycle
IDD(CSI)
CSI oscillator power consumption
-
-
23
30
µA
1. Guaranteed by design.
2. Guaranteed by test in production.
3. Guaranteed by characterization.
Table 46. CSI oscillator characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 47. LSI oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fLSI(1)
1. Guaranteed by characterization results.
LSI frequency
VDD = 3.3 V, TJ = 25 °C
31.4
32
32.6
kHz
TJ = –40 to 105 °C, VDD =
1.62 to 3.6 V
29.76
-
33.60
tsu(LSI)(2)
2. Guaranteed by design.
LSI oscillator startup time
-
-
80
130
µs
tstab(LSI)(2)
LSI oscillator stabilization
time (5% of final value)
-
-
120
170
IDD(LSI)(2)
LSI oscillator power
consumption
-
-
130
280
nA
Table 48. PLL characteristics (wide VCO frequency range)(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fPLL_IN
PLL input clock
-
2
-
16
MHz
PLL input clock duty cycle
-
10
-
90
%



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