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STM32H750VB Datasheet(PDF) 124 Page - STMicroelectronics |
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STM32H750VB Datasheet(HTML) 124 Page - STMicroelectronics |
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124 / 335 page ![]() Electrical characteristics (rev Y) STM32H750VB STM32H750ZB STM32H750IB STM32H750XB 124/334 DS12556 Rev 5 6.3.11 Memory characteristics Flash memory The characteristics are given at TJ = –40 to 125 °C unless otherwise specified. The devices are shipped to customers with the Flash memory erased. Jitter Cycle-to-cycle jitter(3) - VCO = 150 MHz -145 - +/- ps VCO = 300 MHz -91 - VCO = 400 MHz -64 - VCO = 420 MHz -63 - Period jitter fPLL_OUT = 50 MHz VCO = 150 MHz -55 - +/- ps VCO = 400 MHz -30 - Long term jitter Normal mode VCO = 150 MHz -- - % VCO = 300 MHz -- - VCO = 400 MHz -+/-0.3 - I(PLL)(2) PLL power consumption on VDD VCO freq = 420MHz VDD - 440 1150 µA VCORE - 530 - VCO freq = 150MHz VDD - 180 500 VCORE - 200 - 1. Guaranteed by design unless otherwise specified. 2. Guaranteed by characterization results. 3. Integer mode only. Table 49. PLL characteristics (medium VCO frequency range)(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 50. Flash memory characteristics Symbol Parameter Conditions Min Typ Max Unit IDD Supply current Write / Erase 8-bit mode - 6.5 - mA Write / Erase 16-bit mode - 11.5 - Write / Erase 32-bit mode - 20 - Write / Erase 64-bit mode - 35 - |
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