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STM32H750VB Datasheet(PDF) 169 Page - STMicroelectronics |
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STM32H750VB Datasheet(HTML) 169 Page - STMicroelectronics |
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169 / 335 page  DS12556 Rev 5 169/334 STM32H750VB STM32H750ZB STM32H750IB STM32H750XB Electrical characteristics (rev Y) 311 6.3.23 Temperature sensor characteristics esr Equivalent Serial Resistor of CL -- - - 2 ? Iload Static load current - - - - 4 mA Iline_reg Line regulation 2.8 V ≤ VDDA ≤ 3.6 V Iload = 500 µA - 200 - ppm/V Iload = 4 mA - 100 - Iload_reg Load regulation 500 µA ≤ ILOAD ≤ 4 mA Normal Mode - 50 - ppm/ mA Tcoeff Temperature coefficient −40 °C < TJ < +125 °C - - - Tcoeff xVREFINT + 75 ppm/ °C PSRR Power supply rejection DC - - 60 - dB 100KHz - - 40 - tSTART Start-up time CL=0.5 µF - - 300 - µs CL=1 µF - - 500 - CL=1.5 µF - - 650 - IINRUSH Control of maximum DC current drive on VREFBUF_OUT during startup phase(3) -- 8 - mA IDDA(VRE FBUF) VREFBUF consumption from VDDA ILOAD = 0 µA - - 15 25 µA ILOAD = 500 µA - - 16 30 ILOAD = 4 mA - - 32 50 1. Guaranteed by design. 2. In degraded mode, the voltage reference buffer cannot accurately maintain the output voltage (VDDA−drop voltage). 3. To properly control VREFBUF IINRUSH current during the startup phase and the change of scaling, VDDA voltage should be in the range of 1.8 V-3.6 V, 2.1 V-3.6 V, 2.4 V-3.6 V and 2.8 V-3.6 V for VSCALE = 011, 010, 001 and 000, respectively. Table 89. VREFBUF characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 90. Temperature sensor characteristics Symbol Parameter Min Typ Max Unit TL(1) 1. Guaranteed by design. VSENSE linearity with temperature - - 3 °C Avg_Slope(2) Average slope - 2 - mV/°C V30(3) Voltage at 30°C ± 5 °C - 0.62 - V tstart_run(1) Startup time in Run mode (buffer startup) - - 25.2 µs tS_temp(1) ADC sampling time when reading the temperature 9 - - Isens(1) Sensor consumption - 0.18 0.31 µA Isensbuf(1) Sensor buffer consumption - 3.8 6.5 |
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