STM32H750VB datasheet(207/335 Pages) STMICROELECTRONICS

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DS12556 Rev 5

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STM32H750VB STM32H750ZB STM32H750IB STM32H750XB

Electrical characteristics (rev V)

311

7.3.4

Embedded reset and power control block characteristics

The parameters given in Table 124 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 120: General

operating conditions.

Table 124. Reset and power control block characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tRSTTEMPO(1)

Reset temporization

after BOR0 released

377

µs

VBOR0

Brown-out reset threshold 0

Rising edge(1)

1.62

1.67

1.71

Falling edge

1.58

1.62

1.68

VBOR1

Brown-out reset threshold 1

Rising edge

2.04

2.10

2.15

Falling edge

1.95

2.00

2.06

VBOR2

Brown-out reset threshold 2

Rising edge

2.34

2.41

2.47

Falling edge

2.25

2.31

2.37

VBOR3

Brown-out reset threshold 3

Rising edge

2.63

2.70

2.78

Falling edge

2.54

2.61

2.68

VPVD0

Programmable Voltage

Detector threshold 0

Rising edge

1.90

1.96

2.01

Falling edge

1.81

1.86

1.91

VPVD1

Programmable Voltage

Detector threshold 1

Rising edge

2.05

2.10

2.16

Falling edge

1.96

2.01

2.06

VPVD2

Programmable Voltage

Detector threshold 2

Rising edge

2.19

2.26

2.32

Falling edge

2.10

2.15

2.21

VPVD3

Programmable Voltage

Detector threshold 3

Rising edge

2.35

2.41

2.47

Falling edge

2.25

2.31

2.37

VPVD4

Programmable Voltage

Detector threshold 4

Rising edge

2.49

2.56

2.62

Falling edge

2.39

2.45

2.51

VPVD5

Programmable Voltage

Detector threshold 5

Rising edge

2.64

2.71

2.78

Falling edge

2.55

2.61

2.68

VPVD6

Programmable Voltage

Detector threshold 6

Rising edge

2.78

2.86

2.94

Falling edge in Run mode

2.69

2.76

2.83

Vhyst_BOR_PVD

Hysteresis voltage of BOR

(unless BOR0) and PVD

Hysteresis in Run mode

100

IDD_BOR_PVD(1)

BOR(2) (unless BOR0) and

PVD consumption from VDD

0.630

µA

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