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STM32F303X6 Datasheet(PDF) 75 Page - STMicroelectronics |
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STM32F303X6 Datasheet(HTML) 75 Page - STMicroelectronics |
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75 / 124 page  DS9866 Rev 8 75/124 STM32F303x6/x8 Electrical characteristics 102 Electromagnetic interference (EMI) The electromagnetic field emitted by the device are monitored, while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with the IEC 61967-2 standard that specifies the test board and the pin loading. 6.3.12 Electrical sensitivity characteristics Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the JESD22-A114/C101 standard. Static latch-up Two complementary static tests are required on six parts to assess the latch-up performance: • A supply overvoltage is applied to each power supply pin • A current injection is applied to each input, output and configurable I/O pin These tests are compliant with EIA/JESD 78A IC latch-up standard. Table 47. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fHCLK] Unit 8/72 MHz SEMI Peak level VDD = 3.6 V, TA =25 °C, LQFP64 package compliant with IEC 61967-2 0.1 to 30 MHz 5 dBµV 30 to 130 MHz 9 130 MHz to 1GHz 31 SAE EMI Level 4 - Table 48. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) 1. Data based on characterization results, not tested in production. Unit VESD (HBM) Electrostatic discharge voltage (human body model) TA = +25 °C, conforming to JESD22- A114 22000 V VESD (CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C, conforming to JESD22- C101 II 250 |
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