STM32WB50CG datasheet(57/119 Pages) STMICROELECTRONICS

57 / 119 page

DS13047 Rev 5

57/119

STM32WB50CG STM32WB30CE

Electrical characteristics

110

6.3

Operating conditions

6.3.1

Summary of main performance

6.3.2

General operating conditions

Table 19. Main performance at VDD = 3.3 V

Parameter

Test conditions

Typ

Unit

ICORE

Core current



consumption

VBAT (VBAT = 1.8 V, VDD = 0 V)

0.002

µA

Shutdown (VDD = 2.0 V)

0.014

Standby (VDD = 2.0 V, 32 KB RAM retention)

0.35

Stop2

1.85

Sleep (16 MHz)

845

LP run (2 MHz)

320

Run (64 MHz)

8150

Radio RX(1)

7900

Radio TX 0 dBm output power(1)

8800

IPERI

Peripheral

current

consumption

BLE

Advertising with Stop2(2)

(Tx = 0 dBm; Period 1.28 s; 31 bytes, 3 channels)

Advertising with Stop2(2)

(Tx = 0 dBm, 6 bytes; period 10.24 s, 3 channels)

LP timers

RTC

2.5

1. Power consumption including RF subsystem and digital processing.

2. Power consumption integrated over 100 s including Cortex M4, RF subsystem, digital processing and Cortex M0+.

Table 20. General operating conditions

Symbol

Parameter

Conditions

Min

Max

Unit

fHCLK

Internal AHB clock frequency

MHz

fPCLK1 Internal APB1 clock frequency

fPCLK2 Internal APB2 clock frequency

VDD

Standard operating voltage

2(1)

3.6

VDDA

Analog supply voltage

ADC used

3.6

ADC not used

VBAT

Backup operating voltage

1.55

3.6

VDDRF Minimum RF voltage

3.6

VIN

I/O input voltage

TT_xx I/O

–0.3

VDD + 0.3

All I/O except TT_xx

–0.3

min (min (VDD, VDDA) +

3.6 V, 5.5 V)(2)(3)

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