PPC5605BAMLL4R datasheet(63/114 Pages) NXP

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Electrical characteristics

MPC5607B Microcontroller Data Sheet, Rev. 10

NXP Semiconductors

4.9

Flash memory electrical characteristics

4.9.1

Program/erase characteristics

Table 28 shows the program and erase characteristics.

Table 28. Program and erase specifications

Symbol

Parameter

Conditions

Value

Unit

Min Typ1

1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to

change pending device characterization.

Initial

max2

2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.

Max3

3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum

values are characterized but not guaranteed.

tdwprogram

CC C Double word (64 bits) program time4

4 Actual hardware programming times. This does not include software overhead.

Code Flash

—

500

µs

Data Flash

t16Kpperase

16 KB block preprogram and erase time

Code Flash

—

200

500

5000

Data Flash

300

t32Kpperase

32 KB block preprogram and erase time

Code Flash

—

300

600

5000

Data Flash

400

t128Kpperase

128 KB block preprogram and erase time

Code Flash

—

600

1300

7500

Data Flash

800

tesus

D Erase Suspend Latency

—

µs

tESRT

C Erase Suspend Request Rate5

5 Time between erase suspend resume and the next erase suspend request

Code Flash

—

Data Flash

—

PPC5605BAMLL4R Datasheet(PDF) 63 Page - NXP Semiconductors

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