BLF0910H9LS600 datasheet(3/11 Pages) AMPLEON

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BLF0910H9LS600

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Product data sheet

Rev. 2 — 22 June 2018

3 of 11

BLF0910H9LS600

Power LDMOS transistor

6. Characteristics

7. Test information

7.1 Ruggedness in class-AB operation

The BLF0910H9LS600 is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V;

IDq = 90 mA; PL = 600 W (CW); tested in band with soft power ramp up across predefined

integer phase steps.

7.2 Impedance information

[1]

ZS and ZL defined in Figure 1.

Table 6.

DC characteristics

Tj = 25

°C, unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 4 mA

106

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 400 mA 1.5

1.9

2.5

IDSS

drain leakage current

VGS = 0 V; VDS = 50 V

2.8

A

IDSX

drain cut-off current

VGS = VGS(th) + 3.75 V;

VDS = 10 V

-70

IGSS

gate leakage current

VGS = 11 V; VDS = 0 V

280

gfs

forward transconductance

VDS = 10 V; ID = 20 A

30.5

RDS(on)

drain-source on-state resistance VGS = VGS(th) + 3.75 V;

ID = 14 A

0.0575 -



Table 7.

RF characteristics

Test signal: CW; f = 915 MHz; RF performance at VDS = 50 V; IDq = 90 mA; Tcase = 25

°C; unless

otherwise specified; in a class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 600 W

17.7

18.6

RLin

input return loss

PL = 600 W

17.7

9.0

D

drain efficiency

PL = 600 W

62.0

65.7

Table 8.

Typical impedance

Measured load-pull ZS and ZL device impedances; IDq = 90 mA; VDS = 50 V; typical values unless

otherwise specified.

ZS [1]

ZL [1]

(MHz)

(

Ω)

(

Ω)

915

1.5

 1.6j

0.45 + 0.2j

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