BLF0910H9LS600

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© Ampleon Netherlands B.V. 2018. All rights reserved.

Product data sheet

Rev. 2 — 22 June 2018

5 of 11

BLF0910H9LS600

Power LDMOS transistor

7.4 Graphical data

R1

chip resistor

10



MCMR06X10R0FTL

R2, R3

chip resistor

6.2



MC0125W120616R20

R4

shunt resistor

0.01



Ohmite: FC4L110R010FER

Table 9.

Component Description

Value

Remarks

(1) f = 902 MHz

(2) f = 915 MHz

(3) f = 928 MHz

(1) f = 902 MHz

(2) f = 915 MHz

(3) f = 928 MHz

Fig 3.

Power gain and drain efficiency as function of

output power; typical values

Fig 4.

Power gain and drain efficiency as function of

output power; typical values

amp00464

0

100

200

300

400

500

600

700

800

14

0

16

20

18

40

20

60

22

80

(dB)

(dB)

(dB)

(%)

(%)

(%)

(1)

(1)

(1)

(2)

(2)

(2)

(3)

(3)

(3)

(1)

(1)

(1)

(2)

(2)

(2)

(3)

(3)

(3)

amp00465

48

50

52

54

56

58

60

14

0

16

20

18

40

20

60

22

80

(dB)

(dB)

(dB)

(%)

(%)

(%)

(1)

(1)

(1)

(2)

(2)

(2)

(3)

(3)

(3)

(1)

(1)

(1)

(2)

(2)

(2)

(3)

(3)

(3)