BLF0910H9LS600

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© Ampleon Netherlands B.V. 2018. All rights reserved.

Product data sheet

Rev. 2 — 22 June 2018

2 of 11

BLF0910H9LS600

Power LDMOS transistor

2. Pinning information

[1]

Connected to flange.

3. Ordering information

4. Limiting values

[1]

Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF

calculator.

5. Thermal characteristics

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1

drain

2

gate

3

source

[1]

3

2

1

sym112

1

3

2

Table 3.

Ordering information

Type number

Package

Name Description

Version

BLF0910H9LS600

-

earless flanged ceramic package; 2 leads

SOT502B

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Min

Max

Unit

drain-source voltage

-

106

V

gate-source voltage

6+11

V

storage temperature

65

+150

C

junction temperature

[1] -

225

C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

0.174 K/W