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NVMJS3D0N06C Datasheet(PDF) 4 Page - ON Semiconductor

Part # NVMJS3D0N06C
Description  MOSFET - Power, Single N-Channel 60 V, 2.9 m, 139.3 A
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NVMJS3D0N06C Datasheet(HTML) 4 Page - ON Semiconductor

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NVMJS3D0N06C
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
1
0.1
1
100
0
0
2
6
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
50
10
1
1
10
0.8
1.0
0.4
0.2
0.001
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
COSS
CRSS
td(off)
td(on)
tf
tr
TJ = 125°C TJ = 25°C
TJ = −55°C
10
1K
10K
8
100
32
10
VGS = 0 V
8
4
QGS
QGD
VDS = 48 V
ID = 27 A
TJ = 25°C
16
24
0
1.2
10
40
0.6
100
1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (s)
TJ (initial)= 25°C
RDS(on) Limit
Thermal Limit
Package Limit
TC = 25°C
VGS ≤ 10 V
Single Pulse
1000
1
10
1000
0.1
100
10
1
0.1
1
10
100
0.0001
TJ (initial)= 150°C
0.001
0.01
10 ms
1 ms
10 ms
100
0.5 ms
1000
0.1
0.01
200
60
VGS = 10 V
VDS = 48 V
ID = 27 A



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