NVMJS3D0N06C datasheet(1/7 Pages) ONSEMI

Part #	NVMJS3D0N06C

Description	MOSFET - Power, Single N-Channel 60 V, 2.9 m, 139.3 A

PDF	7 Pages

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Manufacturer	ONSEMI [ON Semiconductor]

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DATA SHEET

www.onsemi.com

October, 2021 − Rev. 0

1

Publication Order Number:

NVMJS3D0N06C/D

MOSFET - Power, Single

N-Channel

60 V, 2.9 mW, 139.3 A

NVMJS3D0N06C

Features

• Small Footprint (5x6 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

60

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJC

(Notes 1, 3)

Steady

State

TC = 25°C

ID

139.3

A

TC = 100°C

98.5

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

112.5

W

TC = 100°C

56.2

Continuous Drain

Current RqJA

(Notes 1, 2, 3)

Steady

State

TA = 25°C

ID

26.9

A

TA = 100°C

19

Power Dissipation

RqJA (Notes 1, 2)

TA = 25°C

PD

4.2

W

TA = 100°C

2.1

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

900

A

Operating Junction and Storage Temperature

Range

TJ, Tstg

−55 to

+175

°C

Source Current (Body Diode)

IS

93.7

A

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 9.1 A)

EAS

430

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State (Note 1)

RqJC

1.33

°C/W

Junction−to−Ambient − Steady State

(Notes 1, 2)

RqJA

35.9

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

V(BR)DSS

RDS(ON) MAX

ID MAX

60 V

2.9 mW @ 10 V

139.3 A

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5)

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

MARKING

DIAGRAM

LFPAK8

CASE 760AA

3D0N06

C

AWLYW

G

S

DD D D

SS

1

3D0N06C = Specific Device Code

A

= Assembly Location

WL

= Wafer Lot

Y

= Year

W

= Work Week

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