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PIC18F1230-E/MLQTP Datasheet(PDF) 80 Page - Microchip Technology

Part # PIC18F1230-E/MLQTP
Description  18/20/28-Pin, Enhanced Flash Microcontrollers with nanoWatt Technology, High-Performance PWM and A/D
PDF  312 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC18F1230-E/MLQTP Datasheet(HTML) 80 Page - Microchip Technology

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PIC18F1230/1330
DS39758B-page 78
Advance Information
© 2006 Microchip Technology Inc.
7.7
Operation During Code-Protect
Data EEPROM memory has its own code-protect bits in
Configuration
Words.
External
read
and
write
operations are disabled if either of these mechanisms
are enabled.
The microcontroller itself can both read and write to the
internal data EEPROM, regardless of the state of the
code-protect Configuration bit. Refer to Section 19.0
“Special Features of the CPU” for additional
information.
7.8
Using the Data EEPROM
The
data EEPROM
is
a
high-endurance,
byte
addressable array that has been optimized for the
storage of frequently changing information (e.g.,
program variables or other data that are updated
often). Frequently changing values will typically be
updated more often than specification D124 or D124A.
If this is not the case, an array refresh must be
performed. For this reason, variables that change
infrequently (such as constants, IDs, calibration, etc.)
should be stored in Flash program memory.
A simple data EEPROM refresh routine is shown in
Example 7-3.
EXAMPLE 7-3:
DATA EEPROM REFRESH ROUTINE
TABLE 7-1:
REGISTERS ASSOCIATED WITH DATA EEPROM MEMORY
Note:
If data EEPROM is only used to store
constants and/or data that changes rarely,
an array refresh is likely not required. See
specification D124 or D124A.
CLRF
EEADR
; Start at address 0
BCF
EECON1, CFGS
; Set for memory
BCF
EECON1, EEPGD
; Set for Data EEPROM
BCF
INTCON, GIE
; Disable interrupts
BSF
EECON1, WREN
; Enable writes
LOOP
; Loop to refresh array
BSF
EECON1, RD
; Read current address
MOVLW
55h
;
MOVWF
EECON2
; Write 55h
MOVLW
0AAh
;
MOVWF
EECON2
; Write 0AAh
BSF
EECON1, WR
; Set WR bit to begin write
BTFSC
EECON1, WR
; Wait for write to complete
BRA
$-2
INCFSZ
EEADR, F
; Increment address
BRA
Loop
; Not zero, do it again
BCF
EECON1, WREN
; Disable writes
BSF
INTCON, GIE
; Enable interrupts
Name
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Reset
Values on
page
INTCON
GIE/GIEH
PEIE/GIEL
TMR0IE
INT0IE
RBIE
TMR0IF
INT0IF
RBIF
41
EEADR
EEPROM Address Register
43
EEDATA EEPROM Data Register
43
EECON2 EEPROM Control Register 2 (not a physical register)
43
EECON1
EEPGD
CFGS
—
FREE
WRERR
WREN
WR
RD
43
IPR2
OSCFIP
—
—
EEIP
—
LVDIP
—
—43
PIR2
OSCFIF
—
—
EEIF
—
LVDIF
—
—43
PIE2
OSCFIE
—
—
EEIE
—
LVDIE
—
—43
Legend:
x
= unknown, u = unchanged, — = unimplemented, read as ‘0’. Shaded cells are not used during Flash/
EEPROM access.



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