L6711 datasheet(8/38 Pages) STMICROELECTRONICS

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L6711

8/38

IFB

Droop Current deviation from

nominal value

OFFSET = TC = SGND

IFB = 0 to 75

µA

-3.5

+3.5

µA

Offset Current

ILOAD=0; IOFFSET =100

µA;

TC = SGND

-90

-100

-110

µA

ILOAD=0; IOFFSET =100mA;

TC Enabled

100

110

µA

IOFFSET

OFFSET pin Current

Range

250

µA

VOFFSET

OFFSET pin Voltage

IOFFSET = 0 to 250

µA1.240

THERMAL SENSOR

VTC

TC Voltage at

Tamb = 27ºC

RTC=100k

Ω

RTC=50k

Ω

RTC=5k

Ω

0.612

0.593

0.530

0.645

0.625

0.558

0.677

0.656

0.586

GATE DRIVERS

tRISE HGATE

High Side

Rise Time

BOOTx-PHASEx=10V;

CHGATEx to PHASEx=3.3nF

IHGATEx

High Side

Source Current

BOOTx-PHASEx=10V

RHGATEx

High Side

Sink Resistance

BOOTx-PHASEx=12V;

1.5

2.5

Ω

tRISE LGATE

Low Side

Rise Time

VCCDRx=10V;

CLGATEx to PGNDx=5.6nF

ILGATEx

Low Side

Source Current

VCCDRx=10V

1.8

RLGATEx

Low Side

Sink Resistance

VCCDRx=12V

0.7

1.1

1.5

Ω

PROTECTIONS AND SS_END

VSS_ENDL

SS_END Voltage Low

ISS_END = -4mA

0.4

ISS_ENDH

SS_END Leakage

VSS_END = 5V

µA

UVP

Under Voltage Trip

VSEN Falling

OVP

Over Voltage Threshold

VSEN Rising;

OVP = OPEN

112

115

118

Over Voltage Threshold

VSEN Rising;

OVP = 90k

Ω• to SGND

1.54

1.64

1.74

Preliminary

OVP

Turn-ON Threshold

VCC = VCCDRx Rising

PreOVP Threshold

FBR Rising

1.8

PreOVP Hysteresis

350

Electrical Characteristcs (continued)

(VCC=12V±15%, TJ = 0°C to 70°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

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