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STM32F103XC Datasheet(PDF) 68 Page - STMicroelectronics |
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STM32F103XC Datasheet(HTML) 68 Page - STMicroelectronics |
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68 / 143 page  Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE 68/143 DS5792 Rev 13 Figure 26. Asynchronous multiplexed PSRAM/NOR read waveforms Table 32. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2) 1. CL = 15 pF. 2. Guaranteed by characterization results. Symbol Parameter Min Max Unit tw(NE) FSMC_NE low time 3tHCLK – 1 3tHCLK + 2 ns tv(NWE_NE) FSMC_NEx low to FSMC_NWE low tHCLK – 0.5 tHCLK + 1.5 ns tw(NWE) FSMC_NWE low time tHCLK – 0.5 tHCLK + 1.5 ns th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time tHCLK -ns tv(A_NE) FSMC_NEx low to FSMC_A valid - 7.5 ns th(A_NWE) Address hold time after FSMC_NWE high tHCLK -ns tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 0 ns th(BL_NWE) FSMC_BL hold time after FSMC_NWE high tHCLK – 0.5 - ns tv(Data_NE) FSMC_NEx low to Data valid - tHCLK + 7 ns th(Data_NWE) Data hold time after FSMC_NWE high tHCLK -ns tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 5.5 ns tw(NADV) FSMC_NADV low time - tHCLK + 1.5 ns |
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